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| NTE283 Silicon NPN Transistor Horizontal Output, Switch Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for high-voltage, high- speed, power switching in inductive circuits where fall time is critical. Typical applications include switching regulators, PWM inverters, solenoid and relay drivers. Absolute Maximum Ratings: Collector-Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V Collector-Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (tp 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Total Power Dissipation (TC +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Collector-Base Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Current Gain-Bandwidth Product Second Breakdown Collector Current Symbol ICES IEBO VCBO VCEO(su s) Test Conditions VCEV = 800V, VBE = 0 VEB = 8V, IC = 0 IC = 1mA, IE = 0 IC = 100mA, IB = 0, Note 1 IC = 8A, IB = 2.5A, Note 1 IC = 8A, IB = 2.5A, Note 1 VCE = 10V, IC = 2.5A, Note 1 VCE = 10V, IC = 500mA VCE = 25V, Note 2 Min - - 800 325 - - 15 - 4 Typ - - - - - - - 10 - Max 1 1 - - 3.3 2.2 - - - Unit mA mA V V V V VCE(sat) VBE(sat) hFE fT IS/b MHz A Note 1. Pulse test: Pulse Width = 300s, Duty Cycle = 1.5%. Note 2. Pulsed: 1sec, non-repetitive pulse. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Turn-On Time Storage Time Fall Time Fall Time Symbol ton ts tf tf Test Conditions VCC = 250V, IC = 5A, IB1 = 1A VCC = 250V, IC = 5A, IB1 = -IB2 = 1A VCC = 40V, IC = 8A, IB1 = -IB2 = 2.5A Min - - - - Typ 0.2 1.7 0.3 - Max - - - 1.0 Unit s s s s .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
Price & Availability of NTE283
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